STH160N4LF6-2

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N-channel 40 V, 2.7 mOhm typ., 160 A STripFET F6 Power MOSFET in H2PAK-2 package

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  • This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

    Key Features

    • RDS(on)* Qgindustry benchmark
    • Extremely low on-resistance RDS(on)
    • Logic level drive
    • High avalanche ruggedness
    • 100% avalanche tested

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ECCN (US)
Country of Origin
Budgetary Price (US$)*/Qty
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STH160N4LF6-2 H2PAK-2 Tape And Reel
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EAR99 CHINA Buy now No availability of distributors reported, please contact our sales office

STH160N4LF6-2

Package

H2PAK-2

Packing Type

Tape And Reel

Budgetary Price (US$)*/Qty

Marketing Status

Active

Budgetary Price (US$)* / Qty

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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Mobile Applications

    • Part Number

      STPOWER MOSFET finder mobile app for tablets and smartphones

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Technical Documentation

    • Description Version Size Action
      DS10309
      N-channel 40 V, 0.0018 mΩ typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a H²PAK-2 package
      1.0
      1 MB
      PDF
      DS10309

      N-channel 40 V, 0.0018 mΩ typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a H²PAK-2 package

    • Description Version Size Action
      AN3267
      Impact of power MOSFET VGS on buck converter performance
      1.2
      1.13 MB
      PDF
      AN4191
      Power MOSFET: Rg impact on applications
      1.2
      1.45 MB
      PDF
      AN4390
      ST’s MOSFET technologies for uninterruptible power supplies
      1.1
      1.22 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN3267

      Impact of power MOSFET VGS on buck converter performance

      AN4191

      Power MOSFET: Rg impact on applications

      AN4390

      ST’s MOSFET technologies for uninterruptible power supplies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description Version Size Action
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      STH160N4LF6-2 PSpice model 1.0
      9.67 KB
      ZIP

      STH160N4LF6-2 PSpice model

Publications and Collaterals

    • Description Version Size Action
      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
      568.16 KB
      PDF
      AEC-Q101 STripFET F7 MOSFETs for Automotive 1.0
      743.73 KB
      PDF
      ST MOSFET Finder, the new app for Android and iOS 1.0
      305.22 KB
      PDF
      STPOWER™ STripFET F7 MOSFET for Industrial applications 1.0
      1.15 MB
      PDF

      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions

      AEC-Q101 STripFET F7 MOSFETs for Automotive

      ST MOSFET Finder, the new app for Android and iOS

      STPOWER™ STripFET F7 MOSFET for Industrial applications

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STH160N4LF6-2
Active
H2PAK-2 Industrial Ecopack1

STH160N4LF6-2

Package:

H2PAK-2

Material Declaration**:

Marketing Status

Active

Package

H2PAK-2

Grade

Industrial

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.