STH160N4LF6-2

NRND
Design Win

N-channel 40 V, 2.7 mOhm typ., 160 A STripFET F6 Power MOSFET in H2PAK-2 package

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Product overview

Description

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

  • All features

    • RDS(on)* Qgindustry benchmark
    • Extremely low on-resistance RDS(on)
    • Logic level drive
    • High avalanche ruggedness
    • 100% avalanche tested

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STH160N4LF6-2

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STH160N4LF6-2
NRND
H2PAK-2 Industrial Ecopack1

STH160N4LF6-2

Package:

H2PAK-2

Material Declaration**:

Marketing Status

NRND

Package

H2PAK-2

Grade

Industrial

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STH160N4LF6-2
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STH160N4LF6-2 NRND

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors