STH185N10F3-2

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Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package

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This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.

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AEC-Q101 qualified

Ultra low on-resistance

100% avalanche tested
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	Resource title		Latest update
PDF	DS10596 Automotive-grade N-channel 100 V, 180 A, 3.9 mΩ typ., STripFET™ F3 Power MOSFET in an H²PAK-2 package 3.0		14 Oct 2016	14 Oct 2016 DS10596 Automotive-grade N-channel 100 V, 180 A, 3.9 mΩ typ., STripFET™ F3 Power MOSFET in an H²PAK-2 package 3.0

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STH185N10F3-2

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Product Specifications (1)

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