Product overview
Description
This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.-
All features
- AEC-Q101 qualified
- Ultra low on-resistance
- 100% avalanche tested
Featured Videos
All resources
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Product Specifications (1)
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14 Oct 2016 |
14 Oct 2016
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