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This device is an N-channel Power MOSFET developed using STripFETâ„¢ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
Key Features
- AEC-Q101 qualified
- Ultra low on-resistance
- 100% avalanche tested
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STH185N10F3-6 |
Active
|
H2PAK-6 | Automotive | Ecopack1 |
|
STH185N10F3-6
Package:
H2PAK-6Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||
| STH185N10F3-6 | 1 distributors | Buy now |
Active
|
EAR99 | NEC | Tape And Reel | H2PAK-6 | - | - | CHINA | ||
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors
