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This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFETâ„¢ DeepGATEâ„¢ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
Key Features
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
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Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STH260N6F6-6 |
NRND
|
H2PAK-6 | Industrial | Ecopack1 |
|
STH260N6F6-6
Package:
H2PAK-6Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||
| STH260N6F6-6 | 2 distributors | Buy now |
NRND
|
EAR99 | NEC | Tape And Reel | H2PAK-6 | - | - | CHINA | ||
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors
