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This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFETâ„¢ DeepGATEâ„¢ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
Key Features
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
Sample & Buy
| Part Number | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|
| STH260N6F6-6 | H2PAK-6 | Tape And Reel |
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STH260N6F6-6
Package
H2PAK-6Packing Type
Tape And ReelUnit Price (US$)
*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors
Featured Videos
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Development Tools
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Picture Part number Manufacturer Description ST MOSFET Finder ST MOSFET product finder application for Android and iOS Part NumberMOSFET product finder application for Android and iOS
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| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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| STH260N6F6-6 |
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H2PAK-6 | Industrial | Ecopack1 |
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STH260N6F6-6
Package:
H2PAK-6Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
