STH272N6F7-6AG

NRND

Automotive-grade N-channel 60 V, 0.95 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package

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  • This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    Key Features

    • Designed for automotive applications and AEC-Q101 qualified
    • Among the lowest RDS(on) on the market
    • Excellent FoM (figure of merit)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness

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STMicroelectronics - STH272N6F7-6AG

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STH272N6F7-6AG
NRND
H2PAK-6 Automotive Ecopack1

STH272N6F7-6AG

Package:

H2PAK-6

Material Declaration**:

Marketing Status

NRND

Package

H2PAK-6

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

Part Number
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ECCN (US)
ECCN (EU)
Packing Type
Package
Temperature (°C) Country of Origin
Budgetary Price (US$)*/Qty
min
max
STH272N6F7-6AG No availability of distributors reported, please contact our sales office
NRND
EAR99 NEC Tape And Reel H2PAK-6 - - CHINA 6.0 / 1k

STH272N6F7-6AG

Marketing Status

NRND

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

6.0 / 1k

ECCN (EU)

NEC

Packing Type

Tape And Reel

Package

H2PAK-6

Operating Temperature (°C)

(min)

-

(max)

-

Budgetary Price (US$)* / Qty

6.0 / 1k

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors