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This high-voltage N-channel Power MOSFET is part of the MDmeshâ„¢ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in Rds(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Key Features
- AEC-Q101 qualified
- Fast-recovery body diode
- Lower Rds(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Sample & Buy
| Part Number | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|
| STH47N60DM6-2AG | H2PAK-2 | Tape And Reel |
Active
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3.8 | - | EAR99 | CHINA | Check Availability | Get sample |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors
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Development Tools
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STH47N60DM6-2AG |
Active
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H2PAK-2 | Automotive | Ecopack1 |
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STH47N60DM6-2AG
Package:
H2PAK-2Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
