These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
- Industry’s lowest RDS(on)
- Industry’s best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested
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Quality and Reliability
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RoHS Compliance Grade
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Sample & Buy
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|STI6N80K5||1 distributors||Get sample||I2PAK||Tube|| |
Budgetary Price (US$)* / Qty
Country of Origin