Product overview
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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All features
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
EDA Symbols, Footprints and 3D Models
All resources
Resource title | Version | Latest update |
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SPICE models (1)
Resource title | Version | Latest update | ||
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ZIP | 1.0 | 14 Apr 2019 | 14 Apr 2019 |