Dual N-channel 100 V, 0.065 Ohm typ., 5 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island

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  • This device utilizes the 7thgeneration of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

    Key Features

    • N-channel enhancement mode
    • Lower RDS(on)x area vs previous generation
    • 100% avalanche rated

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Part Number
Package
Packing Type
Marketing Status
Budgetary Price (US$)*
Quantity
ECCN (US)
Country of Origin
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STL20DN10F7 PowerFLAT 5x6 double island Tape And Reel
Active
0.9 1000 EAR99 CHINA No availability of distributors reported, please contact our sales office

STL20DN10F7

Package

PowerFLAT 5x6 double island

Packing Type

Tape And Reel

Unit Price (US$)

0.9*

Marketing Status

Active

Unit Price (US$)

0.9

Quantity

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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Technical Documentation

    • Description Version Size Action
      DS9366
      Dual N-channel 100 V, 0.059 Ω typ., 5 A STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double island package
      3.0
      894.27 KB
      PDF
      DS9366

      Dual N-channel 100 V, 0.059 Ω typ., 5 A STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double island package

    • Description Version Size Action
      AN3267
      Impact of power MOSFET VGS on buck converter performance
      1.2
      1.13 MB
      PDF
      AN4789
      Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance
      1.1
      1,006.7 KB
      PDF
      AN4191
      Power MOSFET: Rg impact on applications
      1.2
      1.45 MB
      PDF
      AN4390
      ST’s MOSFET technologies for uninterruptible power supplies
      1.1
      1.22 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN3267

      Impact of power MOSFET VGS on buck converter performance

      AN4789

      Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance

      AN4191

      Power MOSFET: Rg impact on applications

      AN4390

      ST’s MOSFET technologies for uninterruptible power supplies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description Version Size Action
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      STL20DN10F7 PSpice model 1.0
      3.53 KB
      ZIP

      STL20DN10F7 PSpice model

Publications and Collaterals

    • Description Version Size Action
      AEC-Q101 STripFET F7 MOSFETs for Automotive 1.0
      743.73 KB
      PDF
      STPOWER™ STripFET F7 MOSFET for Industrial applications 1.0
      1.15 MB
      PDF

      AEC-Q101 STripFET F7 MOSFETs for Automotive

      STPOWER™ STripFET F7 MOSFET for Industrial applications

    • Description Version Size Action
      Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      PDF

      Electric vehicle (EV) ecosystem

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STL20DN10F7
Active
PowerFLAT 5x6 double island Industrial Ecopack2

STL20DN10F7

Package:

PowerFLAT 5x6 double island

Material Declaration**:

Marketing Status

Active

Package

PowerFLAT 5x6 double island

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.