This high voltage N-channel Power MOSFET belongs to the MDmesh™ M8 series, based on the new ST trench super-junction technology. The resulting Power MOSFET exhibits very low RDS(on) x area, low gate charge (Qg) and low gate resistance (RG), making it suitable for the most demanding high efficiency converters.
- Very low RDS(on) x area
- Extremely low gate charge and input capacitance
- Low gate resistance (RG)
- 100% avalanche tested
- High dv/dt ruggedness
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
The smart way to design your application
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