This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.
From 400 V to 650 V. Discover our broad range of N-channel super-junction power MOSFETs.
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STL28N60M2
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Quality and Reliability
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|PowerFLAT 8x8 HV||Industrial||Ecopack2|| |
Package:PowerFLAT 8x8 HV
PowerFLAT 8x8 HV
RoHS Compliance Grade
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
|Part Number||Order from distributors||Order from ST||Marketing Status||ECCN (US)||ECCN (EU)||Packing Type||Package||Temperature (°C)||Country of Origin||Budgetary Price (US$)*/Qty|
|STL28N60M2|| distributors |
Distributor availability of STL28N60M2
Distributor reported inventory date:
| Buy from Distributor || |
|EAR99||NEC||Tape and Reel||PowerFLAT 8x8 HV||-||-||CHINA|| |
Tape and Reel
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