STO52N60DM6

Obsolete
Design Win

N-channel 600 V, 68 mOhm typ., 45 A MDmesh DM6 Power MOSFET in a TO-LL package

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Product overview

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

  • All features

    • Fast-recovery body diode
    • Lower RDS(on) per area vs previous generation
    • Low gate charge, input capacitance and resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggedness
    • Zener-protected
    • High-creepage package
    • Excellent switching performance thanks to the extra driving source pin

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STMicroelectronics - STO52N60DM6

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