This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- Very low turn-off switching losses
- 100% avalanche tested
Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.
From 400 V to 650 V. Discover our broad range of N-channel super-junction power MOSFETs.
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STP35N60M2-EP
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