-
This device is a P-channel Power MOSFET developed using the STripFETâ„¢ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche
- Low gate drive power loss
Featured Videos
All tools & software
All resources
Product Specifications (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 25 Sep 2020 |
25 Sep 2020
|
Application Notes (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 13 Sep 2018 |
13 Sep 2018
|
User Manuals (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 21 Oct 2016 |
21 Oct 2016
|
Flyers (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 08 May 2020 |
08 May 2020
|
CAD/EDA Symbols, Footprints and Models
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STP52P3LLH6 |
Active
|
TO-220AB | Industrial | Ecopack2 |
|
STP52P3LLH6
Package:
TO-220ABMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||
| STP52P3LLH6 | 1 distributors | Buy now |
Active
|
EAR99 | NEC | Tube | TO-220AB | - | - | CHINA | 1.5 / 1k | |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors
