These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high efficiency converters.
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
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RoHS Compliance Grade
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