Create more efficient and compact systems than ever with STPOWER SiC MOSFETs
Bring the advantages of innovative wide bandgap materials (WBG) to your next design thanks to STPOWER SiC MOSFETs. With an extended voltage range, from 650 to 1700 V, ST's SiC MOSFETs offer one of the most advanced technology platforms featuring excellent switching performance combined with very low on-state resistance per area.
The main features of our STPOWER SiC MOSFETs include:
- Automotive-grade (AG) qualified devices
- Very high temperature handling capability (max. TJ = 200 °C)
- Very high switching frequency operation and very low switching losses
- Low on-state resistance over the entire temperature range
- Gate drive compatible with existing ICs
- Very fast and robust intrinsic body diode
Our STPOWER SiC MOSFET portfolio includes state-of-the art packages (HiP247, H2PAK-7, TO-247 long leads, STPAK and HU3PAK) specifically designed to meet the stringent requirements of automotive and industrial applications.
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STPOWER SiC can be applied to all types of energy handling
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SCTW100N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package
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SCT20N120H
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
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SCTWA50N120
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 package
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SCTH40N120G2V-7
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SCTW35N65G2VAG
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SCTH60N120G2-7
Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package
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SCT50N120
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
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SCTH100N65G2-7AG
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 95 A in an H2PAK-7 package
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SCTWA90N65G2V
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package
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SCTW60N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package
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SCTWA60N12G2-4AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247-4 package
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SCTWA40N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 long leads package
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SCTW60N120G2
Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package
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SCTWA40N12G24AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
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SCTWA60N120G2-4
Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247-4 package
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SCTWA60N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 long leads package
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SCTWA10N120
Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 long leads package
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SCT10N120H
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
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SCTH40N120G2V7AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
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SCT1000N170
Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
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SCT1000N170AG
Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
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SCT20N170AG
Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm, 43 A in an HiP247 package
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SCTWA50N120-4
Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247-4 package
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SCTW35N65G2V
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 package
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SCTWA20N120
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package
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SCTW70N120G2V
Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
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SCTWA40N120G2V-4
Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247-4 package
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SCTL90N65G2V
Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
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SCTWA70N120G2V-4
Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
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SCTWA40N120G2V
Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
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SCTWA90N65G2V-4
Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
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SCT30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
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SCT10N120
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
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SCT30N120H
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package
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SCTW40N120G2V
Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
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SCT20N120AG
Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
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SCTWA30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
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SCT10N120AG
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SCTW90N65G2V
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
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SCTH90N65G2V-7
Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
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SCTH70N120G2V-7
Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 90 A in an H2PAK-7 package
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SCT20N170
Silicon carbide Power MOSFET 1700 V, 43 A, 64 mOhm (typ., TJ = 25 C) in an HiP247 package
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SCTW100N65G2AG
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package
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SCTH35N65G2V-7
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an H2PAK-7 package
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SCTWA35N65G2V
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 long leads package
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SCTH35N65G2V-7AG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
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SCT20N120
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
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SCTWA35N65G2V4AG
Automotive-grade silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
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SCTWA35N65G2VAG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package
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SCTL35N65G2V
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
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SCTWA35N65G2V-4
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
