The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS-FETs including revolutionary MDmesh™ products.
- GATE CHARGE MINIMIZED
- TYPICAL RDS(on) = 7.2 Ω
- ESD IMPROVED CAPABILITY
- EXTREMELY HIGH dv/dt CAPABILITY
- NEW HIGH VOLTAGE BENCHMARK
- 100% AVALANCHE TESTED
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