These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.
- 100% avalanche tested
- Very low intrinsic capacitance
- Extremely high dv/dt capability
- Improved diode reverse recovery characteristics
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