Product overview
Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
-
All features
- Low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power loss
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STU60N3LH5
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
Symbols
Footprints
3D models
