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This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Key Features
- Higher VDSrating
- Higher dv/dt capability
- Excellent switching performance thanks to the extra driving source pin
- Easy to drive
- 100% avalanche tested
Sample & Buy
| Part Number | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|
| STW57N65M5-4 | TO247-4 | Tube | Active | - | - | EAR99 | CHINA | No availability of distributors reported, please contact our sales office |
STW57N65M5-4
Package
TO247-4Packing Type
TubeUnit Price (US$)
*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
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Development Tools
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STW57N65M5-4 | Active | TO247-4 | Industrial | Ecopack2 | |
STW57N65M5-4
Package:
TO247-4Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
