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  • The LET9045F is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045F is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.

    Key Features

    • Excellent thermal stability
    • Common source configuration
    • POUT (@28 V) = 45 W with 18.5 dB gain @ 960 MHz
    • POUT (@36V) = 70 W with 18.5 dB gain @ 960 MHz
    • BeO free package
    • In compliance with the 2002/95/EC European directive

Recommended for you

00 Files selected for download

Technical Documentation

    • Description Version Size Action
      DS6577
      RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
      3.1
      196.56 KB
      PDF
      DS6577

      RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      LET9045F ADS model 1.0
      401.28 KB
      ZIP

      LET9045F ADS model

Publications and Collaterals

    • Description Version Size Action
      28/32 V LDMOS. New IDCH technology boosts RF power performance up to 4 GHz 1.0
      277.49 KB
      PDF
      28/32V LDMOS; IDDE technology boost efficiency & robustness 1.0
      221.33 KB
      PDF

      28/32 V LDMOS. New IDCH technology boosts RF power performance up to 4 GHz

      28/32V LDMOS; IDDE technology boost efficiency & robustness

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