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  • The LET9120 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz.

    Key Features

    • Excellent thermal stability
    • Common source configuration push-pull
    • POUT= 120 W with 18 dB gain @ 860 MHz
    • BeO-free package

Recommended for you

00 Files selected for download

Technical Documentation

    • Description Version Size Action
      DS6162
      RF power transistor from the LdmoST family of n-channel ehancement-mode lateral MOSFETs
      5.1
      202.94 KB
      PDF
      DS6162

      RF power transistor from the LdmoST family of n-channel ehancement-mode lateral MOSFETs

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      LET9120 ADS model 1.0
      394.15 KB
      ZIP

      LET9120 ADS model

Publications and Collaterals

    • Description Version Size Action
      28/32 V LDMOS. New IDCH technology boosts RF power performance up to 4 GHz 1.0
      277.49 KB
      PDF
      28/32V LDMOS; IDDE technology boost efficiency & robustness 1.0
      221.33 KB
      PDF

      28/32 V LDMOS. New IDCH technology boosts RF power performance up to 4 GHz

      28/32V LDMOS; IDDE technology boost efficiency & robustness

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