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  • The PD84008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. PD84008L-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in leadless SMD plastic RF power package, PowerFLAT™.

    Key Features

    • Excellent thermal stability
    • Common source configuration
    • POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V
    • Plastic package
    • ESD protection
    • In compliance with the 2002/95/EC european directive

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Evaluation Tools

    • Part Number

      4 W / 400 - 470 MHz reference design using PD84001 + PD84008L-E + LPF

      5 W, 740 - 950 MHz evaluation board based on PD84008L-E

      6 W / 380 - 512 MHz evaluation board based on the PD84008L-E

00 Files selected for download

Technical Documentation

    • Description Version Size Action
      DS5616
      RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
      3.1
      198.55 KB
      PDF
      DS5616

      RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      PD84008L-E ADS model 1.0
      313.91 KB
      ZIP

      PD84008L-E ADS model

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