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  • The PD85025-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD85025-E’s superior linearity performance makes it an ideal solution for car mobile radio.

    The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

    Key Features

    • Excellent thermal stability
    • Common source configuration
    • POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V
    • Plastic package
    • ESD protection
    • In compliance with the 2002/95/EC European directive

Recommended for you

Evaluation Tools

    • Part Number

      10 W, 340 - 520 MHz evaluation board based on PD85025-E

00 Files selected for download

Technical Documentation

    • Description Version Size Action
      DS5321
      RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
      3.1
      268.07 KB
      PDF
      DS5321

      RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

    • Description Version Size Action
      AN1294
      PowerSO-10RF: the first true RF power SMD package
      3.2
      1.01 MB
      PDF
      AN1294

      PowerSO-10RF: the first true RF power SMD package

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      PD85025S-E ADS model 1.0
      446.81 KB
      ZIP

      PD85025S-E ADS model