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  • The SD57060 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base station applications requiring high linearity.

    Key Features

    • Excellent thermal stability
    • POUT = 60W with 13dB gain @ 945MHz
    • Common source configuration
    • In compliance with the 2002/95/EC european directive
    • BeO free package

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Technical Documentation

    • Description Version Size Action
      DS1753
      RF power transistor the LdmoST family
      7.2
      395.18 KB
      PDF
      DS1753

      RF power transistor the LdmoST family

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      SD57060 ADS model 1.0
      490.3 KB
      ZIP

      SD57060 ADS model

Publications and Collaterals

    • Description Version Size Action
      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz 1.0
      114.52 KB
      PDF
      28/32V LDMOS: IDDE technology boost efficiency & robustness 1.0
      212.64 KB
      PDF

      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz

      28/32V LDMOS: IDDE technology boost efficiency & robustness