STAC1214-350

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350 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor

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Product overview

Description

The STAC1214-350 is a 50 V common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for L-band radar applications.

  • All features

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internal input matching for ease of use
    • Large positive and negative gate/source voltage range for improved class C operation
    • In compliance with the European Directive 2002/95/EC

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STAC1214-350

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

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3D models

Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STAC1214-350
Active
STAC780-4F Industrial Ecopack1

STAC1214-350

Package:

STAC780-4F

Material Declaration**:

Marketing Status

Active

Package

STAC780-4F

Grade

Industrial

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

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ECCN (US)
ECCN (EU)
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STAC1214-350 Available at distributors

Distributor availability of STAC1214-350

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Active
EAR99 NEC Loose Piece STAC780-4F - -

STAC1214-350 Active

Package:
STAC780-4F
ECCN (US):
EAR99

Part Number:

STAC1214-350

ECCN (EU):

NEC

Packing Type:

Loose Piece

Operating Temperature (°C)

Min:

-

Max:

-

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors