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  • The STAC3933 is an N-channel MOS field-effect RF power transistor, intended for use in 100 V DC large signal applications up to 200 MHz.

    Key Features

    • Excellent thermal stability
    • Common source configuration
    • POUT= 350 W min. with 29 dB gain @ 30 MHz
    • STAC air cavity packaging technology - STAC®package

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Part Number
Marketing Status
Quantity
Budgetary Price (US$)*
Package
Packing Type
ECCN (US)
Country of Origin
Order from Distributors
Order from ST
STAC3933
Active
- - STAC177B Loose Piece EAR99 MOROCCO No availability of distributors reported, please contact our sales office

STAC3933

Marketing Status

Active

Quantity

-

Unit Price (US$)

*

Unit Price (US$)

-

Package

STAC177B

Packing Type

Loose Piece

ECCN (US)

EAR99

Country of Origin

MOROCCO

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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00 Files selected for download

Technical Documentation

    • Description Version Size Action
      DS8849
      RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs
      1.2
      273.61 KB
      PDF
      DS8849

      RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STAC3933
Active
STAC177B Industrial Ecopack1

STAC3933

Package:

STAC177B

Material Declaration**:

Marketing Status

Active

Package

STAC177B

Grade

Industrial

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.