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The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending STAC® package technology.
Key Features
- Excellent thermal stability
- Common source push-pull configuration
- POUT= 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz
- Pulse conditions: 1 msec - 10%
- In compliance with the 2002/95/EC European directive
- ST air-cavity STAC® packaging technology
Evaluation Tools
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Picture Part number Manufacturer Description 
STEVAL-IMR002V1 -- 2 kW/100 V RF demonstration board for 3 T MRI based on the STAC4932B Part Number2 kW/100 V RF demonstration board for 3 T MRI based on the STAC4932B
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