Product overview
Description
The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending STAC package technology.-
All features
- Excellent thermal stability
- Common source push-pull configuration
- POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz
- Pulse conditions: 1ms, 10%
- In compliance with the 2002/95/EC European directive
- ST air-cavity STAC package technology
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All tools & software
All resources
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Product Specifications (1)
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10 Apr 2020 |
10 Apr 2020
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Application Notes (2)
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13 Sep 2018 |
13 Sep 2018
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18 Dec 2015 |
18 Dec 2015
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EDA Symbols, Footprints and 3D Models
All resources
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HW Model, CAD Libraries & SVD (1)
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ZIP | 11 Dec 2020 |
11 Dec 2020
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Sample & Buy
Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Budgetary Price (US$)*/Qty | ||
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min | max | ||||||||||
STAC4932B | 1 distributors |
Active
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EAR99 | NEC | Loose Piece | STAC780-4B | - | - | 80.0 / 1k |
Marketing Status
ActiveECCN (US)
EAR99(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors