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The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending STAC® package technology.
Key Features
- Excellent thermal stability
- Common source push-pull configuration
- POUT= 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz
- Pulse conditions: 1 msec - 10%
- In compliance with the 2002/95/EC European directive
- ST air-cavity STAC® packaging technology
Sample & Buy
| Part Number | Marketing Status | Quantity | Budgetary Price (US$)* | Package | Packing Type | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|
| STAC4932B |
Active
|
1000 | 80 | STAC244B | Loose Piece | EAR99 | MOROCCO | Check Availability |
STAC4932B
Marketing Status
ActiveQuantity
1000Unit Price (US$)
80.0*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors
Featured Videos
Development Tools
Evaluation Tools
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Picture Part number Manufacturer Description 
STEVAL-IMR002V1 -- 2 kW/100 V RF demonstration board for 3 T MRI based on the STAC4932B Part Number2 kW/100 V RF demonstration board for 3 T MRI based on the STAC4932B
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| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STAC4932B |
Active
|
STAC244B | Industrial | Ecopack1 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
