STAC4932B

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1200W Pulse - 100V HF/VHF DMOS TRANSISTOR in STAC package

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  • The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending STAC® package technology.

    Key Features

    • Excellent thermal stability
    • Common source push-pull configuration
    • POUT= 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz
    • Pulse conditions: 1 msec - 10%
    • In compliance with the 2002/95/EC European directive
    • ST air-cavity STAC® packaging technology

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Related Applications

Medical and Healthcare

Evaluation Tools

    • Part Number

      2 kW/100 V RF demonstration board for 3 T MRI based on the STAC4932B

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Technical Documentation

    • Description Version Size Action
      DS6724
      HF/VHF/UHF RF power N-channel MOSFET
      7.0
      503.06 KB
      PDF
      DS6724

      HF/VHF/UHF RF power N-channel MOSFET

    • Description Version Size Action
      AN4016
      2 kW PPA for ISM applications
      1.0
      981.18 KB
      PDF
      AN3232
      Mounting recommendations for STAC® and STAP® boltdown packages
      4.0
      1.67 MB
      PDF
      AN4016

      2 kW PPA for ISM applications

      AN3232

      Mounting recommendations for STAC® and STAP® boltdown packages

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      STAC4932x ADS model 1.0
      417.15 KB
      ZIP

      STAC4932x ADS model

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