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  • The STAC9200 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband applications in the HF to 1300 MHz frequency range. The STAC9200 benefits from the latest generation of efficient STAC® package technology.

    Key Features

    • Improved ruggedness: V(BR)DSS> 80 V
    • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10%
    • POUT = 200 W min. (250 W typ.) with 16 dB gain @ 860 MHz
    • In compliance with the 2002/95/EC European directive
    • ST air-cavity STAC® packaging technology

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Technical Documentation

    • Description Version Size Action
      DS9997
      200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package
      3.0
      492.17 KB
      PDF
      DS9997

      200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package

Publications and Collaterals

    • Description Version Size Action
      28/32 V LDMOS. New IDCH technology boosts RF power performance up to 4 GHz 1.0
      277.49 KB
      PDF
      28/32V LDMOS; IDDE technology boost efficiency & robustness 1.0
      221.33 KB
      PDF

      28/32 V LDMOS. New IDCH technology boosts RF power performance up to 4 GHz

      28/32V LDMOS; IDDE technology boost efficiency & robustness

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