STAC9200 - 200W 32V HF to 1.3GHz LDMOS transistor in STAC package - STMicroelectronics

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The STAC9200 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband applications in the HF to 1300 MHz frequency range. The STAC9200 benefits from the latest generation of efficient STAC^®package technology.

Key Features
- Improved ruggedness: V_(BR)DSS> 80 V
- Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10%
- P_OUT = 200 W min. (250 W typ.) with 16 dB gain @ 860 MHz
- In compliance with the 2002/95/EC European directive
- ST air-cavity STAC^®packaging technology
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Technical Documentation

Product Specifications
- Description Version Size Action
  
  DS9997
  200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package 3.0
  492.17 KB
  PDF
  
  DS9997
  
  200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package
  
  PDF

Publications and Collaterals

Flyers

	Description	Version	Size	Action
	28/32 V LDMOS. New IDCH technology boosts RF power performance up to 4 GHz	1.0	277.49 KB	PDF
	28/32V LDMOS; IDDE technology boost efficiency & robustness	1.0	221.33 KB	PDF

28/32 V LDMOS. New IDCH technology boosts RF power performance up to 4 GHz

28/32V LDMOS; IDDE technology boost efficiency & robustness