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  • The STAP85025S is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at a frequency up to 1 GHz. The STAP85025S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP® ST advanced PowerSO-10 RF package. The STAP85025S superior linearity performance makes it an ideal solution for the car mobile radio.

    The STAP® ST plastic package has been designed to offer high reliability and high power capability. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly.

    Key Features

    • Excellent thermal stability
    • Common source configuration
    • POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V
    • Plastic package
    • ESD protection
    • In compliance with the 2002/95/EC European directive

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Technical Documentation

    • Description Version Size Action
      DS6309
      RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
      5.0
      189.37 KB
      PDF
      DS6309

      RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs