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The STIPNS2M50T-H is a compact solution providing high voltage three-phase motor drive with optimized switching and thermal performance.

This device provides everything that is needed to build a complete power stage, including:

  • MOSFET transistors
  • Gate drivers
  • Smart protections
  • Signal conditioning

The STIPNS2M50T-H is an Intelligent Power Module (IPM) saving board space and cost, reducing the overall bills-of-material.

  • Key target applications:
  • Air Conditioning
  • Fans
  • Recirculation Pumps
  • Roller shutters

The STIPNS2M50T-H includes MOSFET transistors with maximal voltage at 500 V. This allows for application to be powered from rectified AC mains. Additionally, due to optimized switching, IPM provides low electromagnetic interference characteristics.

ST offer includes a full ecosystem with software libraries, tools, GUI as well as microcontrollers for control stage.

  • High density integration – significant BOM reduction
  • Very compact and simplified layout
  • Enhanced EMI characteristics 
  • Variety of protections
  •  Easy to run 


Part Number

Signal Conditioning & Protection


Power & Energy Management


ST offers the STEVAL-IPMNM2S evaluation board, a compact solution based on the STIPNS2M50T-H. The board contains a motor control connector to allow interfacing with the NUCLEO board (MCU) through the X-NUCLEO-IHM09M1 extension board. Three shunt or single shunt topology can be selected to drive the inverter.

The STEVAL-IPMNM2S can be used with the MCSDK (STM32 Motor Control Software Development Kit), which provides a GUI for setting up and generating code for field-oriented control (FOC) algorithm.

The STEVAL-IPMNM2S board offers driving and power stage implemented in the STIPNS2M50T-H for motor control applications, with additional signal conditioning through the TSV994. This board can be used with the X-NUCLEO-IHM09M1 and the NUCLEO-F303RE in conjunction with the MCSDK to offer a complete (HW and SW) easy-to-use solution for high voltage low power motor control applications.  

Three-phase inverter is based on MOSFET transistors:

  • Breakdown voltage 500 V
  • Turn-on resistance RDS(on) 1.7 Ω max.
  • Fast source - drain diode

Three half-bridge gate drivers provide:

  • Supply voltage range up to 18 V 
  • Integrated bootstrap diodes
  • Interlocking function

Smart protections offer:

  • Undervoltage lockout
  • Shutdown function
  • NTC for temperature monitoring

Signal conditioning circuits:

  • 1 Operational Amplifier
  • Overcurrent comparator

  • High density integration – significant BOM reduction
  • Enhanced immunity to EMI
  • Variety of protection (UVLO, Interlocking and deadtime functions)
  • Standby mode for low power consumption
  • Easy to run 


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