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電気自動車(EV)がますます実用化されるに伴い、DC急速充電ステーションやCHAdeMO準拠の急速充電ステーションといった充電ステーションのニーズも高まっています。

DC急速充電ステーション

DC急速充電ステーションでは、わずか10分程度で100kmの走行距離に相当する充電(レベル3)を車両に提供します。AC電力をバッテリに供給(その後車載充電器によってDC電力に変換)するレベル2充電器と比べ、レベル3の急速充電器は、DC電力を直接供給することで充電時間を著しく短縮しています。

現在、DC充電ステーションの主な電力レベルとして、市街地走行用の50kW以下レベル、高速道路走行用の150kWレベル、スーパーカー / トラック / バス用の350kWレベルの3つがあります。DC急速充電器には、通常、20kWのサブユニットが組み込まれており、このユニットを積み重ねることでより高出力のDC充電システムを実現します。市場調査によると、市街地走行用の50kW以下レベルのカテゴリが最大の成長を示しています。

STのDC急速充電器設計向け製品

STは、シリコン・カーバイド(SiC)MOSFETおよびシリコン・パワーMOSFET、ダイオード、保護デバイス(TVS)、絶縁型ゲート・ドライバといった幅広いパワー・ディスクリート製品、および高性能STM32マイクロコントローラを提供し、高効率かつ高電力密度のDC急速充電ステーションの開発に貢献しています。

STのCANトランシーバは、電気自動車と充電スタンド間の接続の円滑化をサポートします。また、パワー・ライン・トランシーバとプログラム可能なBluetooth® Low Energy SoCにより、充電スタンドとユーザ・インタフェース間の高速接続を実現します。

ブロック図

block diagram DC Fast Charging Station
製品型番
概要
STEVAL-DPSTPFC1 3.6 kW PFC totem pole with inrush current limiter reference design using TN3050H-12WY and SCTW35N65G2V Quick view

主な特徴

  • 97.5 % efficiency at full load
  • Max. 5 % THD at 10 % of full load
  • Compact PFC converter
  • Higher switching lifetime
  • Compliant with EMI norms at 4kV
  • RoHS compliant
  • WEEE compliant

さらに表示

画像

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STDES-PFCBIDIR 15 kW, three-phase, three-level Active Front End (AFE) bidirectional converter for industrial and electric vehicle DC fast charging applications Quick view

主な特徴

  • 3-phase, 3-level bidirectional AC/DC power converter:
    • Rated nominal DC voltage: 800 VDC
    • Rated nominal AC voltage: 400 VAC @ 50 Hz
    • Nominal power: 15 kW
  • AC to DC rectifier mode:
    • Power factor control (PFC) PF > 0.99
    • Inrush current control and soft start-up
  • DC to AC inverter mode:
    • Active and reactive power control
    • Integrated grid connection solution
  • Power section based on SiC MOSFETs:
    • High frequency operation (100 kHz)
    • High efficiency, η = 99%
    • Passive element weight and size reduction
  • Control section based on STM32G474RE microcontroller:
    • P2P compatible with other STDES 3-phase power converters
    • 4 integrated high-performance op-amps
    • Control and monitoring interfaces: SWIM, UART, I²C, DACs
    • 64-pin Digital Power connector
    • Overcurrent and overvoltage protection
    • Configurable topology (2 – 3 levels)

さらに表示

画像

Image
Image

注目リソース

Schematics BOM Gerber
製品型番
STEVAL-DPSTPFC1

3.6 kW PFC totem pole with inrush current limiter reference design using TN3050H-12WY and SCTW35N65G2V

主な特徴

  • 97.5 % efficiency at full load
  • Max. 5 % THD at 10 % of full load
  • Compact PFC converter
  • Higher switching lifetime
  • Compliant with EMI norms at 4kV
  • RoHS compliant
  • WEEE compliant

さらに表示

画像

Image
Image
STDES-PFCBIDIR

15 kW, three-phase, three-level Active Front End (AFE) bidirectional converter for industrial and electric vehicle DC fast charging applications

主な特徴

  • 3-phase, 3-level bidirectional AC/DC power converter:
    • Rated nominal DC voltage: 800 VDC
    • Rated nominal AC voltage: 400 VAC @ 50 Hz
    • Nominal power: 15 kW
  • AC to DC rectifier mode:
    • Power factor control (PFC) PF > 0.99
    • Inrush current control and soft start-up
  • DC to AC inverter mode:
    • Active and reactive power control
    • Integrated grid connection solution
  • Power section based on SiC MOSFETs:
    • High frequency operation (100 kHz)
    • High efficiency, η = 99%
    • Passive element weight and size reduction
  • Control section based on STM32G474RE microcontroller:
    • P2P compatible with other STDES 3-phase power converters
    • 4 integrated high-performance op-amps
    • Control and monitoring interfaces: SWIM, UART, I²C, DACs
    • 64-pin Digital Power connector
    • Overcurrent and overvoltage protection
    • Configurable topology (2 – 3 levels)

さらに表示

画像

Image
Image

注目リソース

Schematics BOM Gerber
00 ファイルがダウンロード用に選択されています

技術文書

    • 概要 バージョン サイズ アクション
      AN604
      Calculation of conduction losses in a power rectifier
      3.2
      137.74 KB
      PDF
      AN4021
      Calculation of reverse losses in a power diode
      1.0
      120.47 KB
      PDF
      AN5028
      Calculation of turn-off power losses generated by a ultrafast diode
      1.0
      1.68 MB
      PDF
      AN4381
      Current sharing in parallel diodes
      1.0
      449.12 KB
      PDF
      AN4689
      EVLSTNRG-1KW: 1 kW SMPS digitally controlled multiphase interleaved converter using the STNRG388A
      1.1
      5.33 MB
      PDF
      AN1453
      NEW FAMILY OF 150V POWER SCHOTTKY
      1.1
      131.48 KB
      PDF
      AN4242
      New generation of 650 V SiC diodes
      2.0
      4.75 MB
      PDF
      AN5046
      Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT packages
      4.0
      4.82 MB
      PDF
      AN5088
      Rectifiers thermal management, handling and mounting recommendations
      2.0
      2.32 MB
      PDF
      AN533
      SCRs, TRIACs, and AC switches, thermal management precautions for handling and mounting
      3.6
      217.19 KB
      PDF
      AN443
      SERIES OPERATION ON FAST RECTIFIERS
      2.1
      202.48 KB
      PDF
      AN4875
      STCOMET smart meter and power line communication system-on-chip G3-PLC characterization
      1.0
      2.09 MB
      PDF
      AN4732
      STCOMET smart meter and power line communication system-on-chip development kit
      3.0
      2.52 MB
      PDF
      AN1542
      THE THERMAL RUNAWAY LAW IN SCHOTTKY USED IN OR-ING APPLICATION
      1.1
      57.47 KB
      PDF
      AN869
      Tj max limit of Schottky diodes
      2.2
      60.9 KB
      PDF
      AN604

      Calculation of conduction losses in a power rectifier

      AN4021

      Calculation of reverse losses in a power diode

      AN5028

      Calculation of turn-off power losses generated by a ultrafast diode

      AN4381

      Current sharing in parallel diodes

      AN4689

      EVLSTNRG-1KW: 1 kW SMPS digitally controlled multiphase interleaved converter using the STNRG388A

      AN1453

      NEW FAMILY OF 150V POWER SCHOTTKY

      AN4242

      New generation of 650 V SiC diodes

      AN5046

      Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT packages

      AN5088

      Rectifiers thermal management, handling and mounting recommendations

      AN533

      SCRs, TRIACs, and AC switches, thermal management precautions for handling and mounting

      AN443

      SERIES OPERATION ON FAST RECTIFIERS

      AN4875

      STCOMET smart meter and power line communication system-on-chip G3-PLC characterization

      AN4732

      STCOMET smart meter and power line communication system-on-chip development kit

      AN1542

      THE THERMAL RUNAWAY LAW IN SCHOTTKY USED IN OR-ING APPLICATION

      AN869

      Tj max limit of Schottky diodes

関連資料

    • 概要 バージョン サイズ アクション
      1200V SiC diodes, 2 to 40 A in surface-mount and through-hole packages 1.0
      626.4 KB
      PDF
      400/650 V MDmesh™ DM2: ST’s new MOSFET series with integrated fast-recovery body diode 1.0
      342.97 KB
      PDF
      650V HB series IGBTs; Innovative 4-lead package 1.0
      919.8 KB
      PDF
      ACEPACK™: Adaptable, Compact, and Easier Packages Power Modules 1.0
      770.2 KB
      PDF
      HB series 650 V IGBTs; Trench Gate Field-stop High-speed technologies 1.0
      183.23 KB
      PDF
      ST Diodes Finder : the new app for Android and iOS 2.0
      1.46 MB
      PDF
      STGAP1AS - 革新的な堅牢性と優れた柔軟性を実現するガルバニック絶縁素子内蔵ゲート・ドライバ 03.2017
      263.71 KB
      PDF
      SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
      651.11 KB
      PDF
      Trench gate field-stop IGBT 1200V M series 1.0
      1.9 MB
      PDF
      ST8500 スマート・グリッド社会の実現に貢献 10.2017
      735.08 KB
      PDF

      1200V SiC diodes, 2 to 40 A in surface-mount and through-hole packages

      400/650 V MDmesh™ DM2: ST’s new MOSFET series with integrated fast-recovery body diode

      650V HB series IGBTs; Innovative 4-lead package

      ACEPACK™: Adaptable, Compact, and Easier Packages Power Modules

      HB series 650 V IGBTs; Trench Gate Field-stop High-speed technologies

      ST Diodes Finder : the new app for Android and iOS

      STGAP1AS - 革新的な堅牢性と優れた柔軟性を実現するガルバニック絶縁素子内蔵ゲート・ドライバ

      SiC MOSFETs: The real breakthrough in high-voltage switching

      Trench gate field-stop IGBT 1200V M series

      ST8500 スマート・グリッド社会の実現に貢献

    • 概要 バージョン サイズ アクション
      Connectivity solution for Electric Vehicle 1.0
      355.31 KB
      PDF

      Connectivity solution for Electric Vehicle

Diodes and Rectifiers

品名 概要
STPSC40H12C 1200 V, 40 A High Surge Silicon Carbide Power Schottky Diode
品名
1200 V, 40 A High Surge Silicon Carbide Power Schottky Diode

MEMS and Sensors

品名 概要
AIS3624DQ 3-axis accelerometer for non-safety automotive applications, ultra low power, SPI/I2C digital output, AEC-Q100 qualified
H3LIS100DL Ultra low power 3-axis accelerometer, SPI/I2C digital output MEMS motion sensor
H3LIS200DL Ultra low power 3-axis accelerometer, SPI/I2C digital output MEMS motion sensor, user-selectable full scales of ±100g/±200g
H3LIS331DL Low power High-g 3-axis accelerometer, SPI/I2C digital output MEMS motion sensor, user-selectable full scales of ±100g/±200g/±400g
LM135 Precision Temperature Sensor
STLM20 Analog temperature sensor, ultra-low current 2.4 V, high precision
STTS751 2.25 V low-voltage local digital temperature sensor
品名
3-axis accelerometer for non-safety automotive applications, ultra low power, SPI/I2C digital output, AEC-Q100 qualified
Ultra low power 3-axis accelerometer, SPI/I2C digital output MEMS motion sensor
Ultra low power 3-axis accelerometer, SPI/I2C digital output MEMS motion sensor, user-selectable full scales of ±100g/±200g
Low power High-g 3-axis accelerometer, SPI/I2C digital output MEMS motion sensor, user-selectable full scales of ±100g/±200g/±400g
Precision Temperature Sensor
Analog temperature sensor, ultra-low current 2.4 V, high precision
2.25 V low-voltage local digital temperature sensor

パワー・マネージメント

品名 概要
ALTAIR04-900 Off-line all-primary-sensing switching regulator
ALTAIR05T-800 Off-line all-primary-sensing switching regulator
L6985F 38 V 500 mA synchronous step-down switching regulator with 30 uA quiescent current
L6986F 38 V 1.5 A synchronous step-down switching regulator with 30 uA quiescent current
L7985 2A step-down switching regulator
L7986 3A step-down switching regulator
L7987 61 V 3 A asynchronous step-down switching regulator with adjustable current limitation
PM8834 4 A dual low side MOSFET driver
PM8841 Single channel low-side gate driver
PM8851 1A Low Side Gate Driver with configurable asymmetric sink/source
ST1S40 3A DC step-down switching regulator
ST1S50 4A Monolithic synchronous step-down converter with high efficiency at light load
STGAP1AS Automotive galvanically isolated single gate driver
品名
Off-line all-primary-sensing switching regulator
Off-line all-primary-sensing switching regulator
38 V 500 mA synchronous step-down switching regulator with 30 uA quiescent current
38 V 1.5 A synchronous step-down switching regulator with 30 uA quiescent current
2A step-down switching regulator
3A step-down switching regulator
61 V 3 A asynchronous step-down switching regulator with adjustable current limitation
4 A dual low side MOSFET driver
Single channel low-side gate driver
1A Low Side Gate Driver with configurable asymmetric sink/source
3A DC step-down switching regulator
4A Monolithic synchronous step-down converter with high efficiency at light load
Automotive galvanically isolated single gate driver

Power Transistors

品名 概要
SCTW100N65G2AG Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package
STB6N80K5 N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in D2PAK package
STB80N20M5 N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh M5 Power MOSFET in D2PAK Package
STB8N65M5 N-channel 650 V, 0.56 Ohm typ., 7 A MDmesh M5 Power MOSFET in D2PAK package
STB8N90K5 N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package
STGW60H65DFB-4 Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
STW88N65M5-4 N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 package
品名
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package
N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in D2PAK package
N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh M5 Power MOSFET in D2PAK Package
N-channel 650 V, 0.56 Ohm typ., 7 A MDmesh M5 Power MOSFET in D2PAK package
N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 package

Protection Devices

品名 概要
1.5KE 1500 W, TVS in DO-201
BZW50 5000 W TVS
P6KE 600 W TVS in DO-15
SM15T 1500 W, TVS in SMC
SM6T 600 W TVS in SMB
SMBJ 600 W TVS in SMB
品名
1500 W, TVS in DO-201
5000 W TVS
600 W TVS in DO-15
1500 W, TVS in SMC
600 W TVS in SMB
600 W TVS in SMB

Thyristors (SCR) and AC Switches

品名 概要
BTW69-1200N 50 A 1200 V SCR Thyristor in non-insulated TOP3
TN2540 Standard 25 A SCRs
TN5050H-12WY 50A 1200V automotive grade SCR
品名
50 A 1200 V SCR Thyristor in non-insulated TOP3
Standard 25 A SCRs
50A 1200V automotive grade SCR
サポート & フィードバック