STの高電圧ドライバは、ベクトル･モータ駆動システムを最適化し、高スイッチング周波数において優れた性能を発揮するとともに、スマート･シャットダウン機能によってアプリケーションを保護します。
STDRIVE MOSFET / IGBTゲート・ドライバには、保護用コンパレータ、電流検出オペアンプ、およびブートストラップ･ダイオードが集積されており、システム･レベルで必要な外付け部品が少なくなっています。
注目ビデオ
MasterGaN, ST's world first solution to integrate Si driver and 2 GaN power transistors in 1 package
- MASTERGAN2 High power density 600V Half bridge driver with two enhancement mode GaN HEMTs
- L6389E High voltage high and low-side driver
- MASTERGAN1 High power density 600V half-bridge driver with two enhancement mode GaN HEMTs
- MASTERGAN5 High power density 600 V half-bridge driver with two enhancement mode GaN power HEMTs
- L6386AD HV High and low side driver with embedded comparator and bootstrap diode
- L6395 High voltage high and low-side driver
- L6399 High voltage high and low-side driver
- L6498 High voltage high and low-side 2 A gate driver
- L6388E HV high and low side driver with embedded bootstrap diode
- L6494 High voltage high and low-side 2 A gate driver
- L6387E High voltage high and low-side driver
- L6386E HV high and low side driver with embedded comparator and bootstrap diode
- L6385E HV high and low side driver with embedded bootstrap diode
- L6384E High voltage high and low side driver with bootstrap diode
- L6491 High voltage high and low-side 4 A gate driver
- L6391 High voltage high and low-side driver
- L6390 High voltage high/ low-side driver
- MASTERGAN3 High power density 600 V Half bridge driver with two enhancement mode GaN HEMTs
- L6393 Half bridge gate driver
- L6392 High voltage high and low-side driver
- MASTERGAN4 High power density 600V half-bridge driver with two enhancement mode GaN HEMTs
- A6387 High-voltage high and low side driver for automotive applications
- L6398 High voltage high and low-side driver
