The devices are NPN transistors manufactured using new \"PB-HCD\" (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
- Very low collector-emitter saturation voltage
- Fast-switching speed
- High current gain characteristic
Product Specifications (1)
|Resource title||Latest update|
|19 Sep 2016||
19 Sep 2016
EDA Symbols, Footprints and 3D Models
STMicroelectronics - 2STX1360
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