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The devices are NPN transistors manufactured using new \"PB-HCD\" (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
特徴
- Very low collector-emitter saturation voltage
- Fast-switching speed
- High current gain characteristic
注目ビデオ
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Product Specifications (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 19 Sep 2016 |
19 Sep 2016
|
EDA Symbols, Footprints and 3D Models
STMicroelectronics - 2STX1360
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