MJD112

生産終了
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Low voltage NPN power Darlington transistor

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製品概要

概要

The devices are manufactured in planar technology with \"base island\" layout and monolithic Darlington configuration.

  • 特徴

    • Good hFE linearity
    • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
    • High fT frequency
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STマイクロエレクトロニクス - MJD112

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