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These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
主な特徴
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on)*Qg in the industry
サンプル & 購入
| 製品型番 | パッケージ | Packing Type | Marketing Status | Budgetary Price (US$)* | 数量 | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|
| STB11NM80T4 | D2PAK | Tape And Reel |
Active
|
- | - | EAR99 | CHINA | Check Availability |
STB11NM80T4
パッケージ
D2PAKPacking Type
Tape And ReelUnit Price (US$)
*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
開発ツール･ハードウェア
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写真 Part number 製造元 Description ST MOSFET Finder ST MOSFET product finder application for Android and iOS 製品型番MOSFET product finder application for Android and iOS
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| 製品型番 | Marketing Status | パッケージ | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STB11NM80T4 |
Active
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D2PAK | インダストリアル | Ecopack2 |
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STB11NM80T4
Package:
D2PAKMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
