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This Power MOSFET is the latest development of STMicroelectronis unique \"Single Feature SizeTM\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
主な特徴
- TYPICAL RDS(on) = 0.01 Ω
- LOW GATE CHARGE
- OPTIMIZED FOR HIGH SWITCHING OPERATIONS
- LOGIC LEVEL GATE DRIVE
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | 数量 | ECCN (US) | Country of Origin | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|
| STB55NF03LT4 | D2PAK | Tape And Reel | NRND | - | EAR99 | CHINA | 在庫チェック | 購入 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
開発ツール･ハードウェア
| 製品型番 | 製品ステータス | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
|---|---|---|---|---|---|
| STB55NF03LT4 | NRND | D2PAK | インダストリアル | Ecopack2 | |
STB55NF03LT4
Package:
D2PAKMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
