This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
- Designed for automotive applications and AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
The smart way to design your application
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.