STD130N4F6AG

生産終了
Design Win

Automotive-grade N-channel 40 V, 3.0 mOhm typ., 80 A STripFET F6 Power MOSFET in a DPAK package

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製品概要

概要

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.

  • 特徴

    • Designed for automotive applications and AEC-Q101 qualified
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss

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STMicroelectronics - STD130N4F6AG

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