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This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
主な特徴
- Designed for automotive applications and AEC-Q101 qualified
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
サンプル & 購入
| 製品型番 | パッケージ | Packing Type | Marketing Status | Budgetary Price (US$)* | 数量 | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|
| STD14NM50N | DPAK | Tape And Reel |
NRND
|
0.9 | 1000 | EAR99 | - | Check Availability |
STD14NM50N
パッケージ
DPAKPacking Type
Tape And ReelUnit Price (US$)
0.9*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
開発ツール･ハードウェア
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写真 Part number 製造元 Description ST MOSFET Finder ST MOSFET product finder application for Android and iOS 製品型番MOSFET product finder application for Android and iOS
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| 製品型番 | Marketing Status | パッケージ | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STD14NM50N |
NRND
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DPAK | オートモーティブ | Ecopack1 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
