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  • The device is manufactured in PNP Planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

    主な特徴

    • Very low collector to emitter saturation voltage
    • Fast-switching speed
    • High current gain characteristic
    • Through-hole IPAK (TO-251) power package in tube (suffix “-1”)
    • Surface-mounting DPAK (TO-252) power package in tape& reel (suffix “T4)

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