製品概要
概要
The device is a dual NPN high voltage power transistor manufactured using multi-epitaxial planar technology. It is housed in dual-island DIP-8 package with separated terminals to provide a high degree of assembly flexibility.
-
特徴
- Low VCE(sat)
- Simplified circuit design
- Reduced component count
- Fast switching speed
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - STD845DN40
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
EDAシンボル
フットプリント
3Dモデル
