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  • The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

    主な特徴

    • Reduced switching losses
    • Lower RDS(on) per area vs previous generation
    • Low gate input resistance
    • 100% avalanche tested
    • Zener-protected

サンプル & 購入

製品型番
パッケージ
梱包タイプ
製品ステータス
概算価格(USS)
Quantity
ECCN (US)
Country of Origin
販売代理店からオーダー
STからオーダー
STF7N65M6 TO-220FP Tube
Active
- - EAR99 CHINA

販売代理店に在庫がない場合は、STのセールスオフィスまでお問い合わせください

STF7N65M6

パッケージ

TO-220FP

梱包タイプ

Tube

Unit Price (US$)

*

製品ステータス

Active

Unit Price (US$)

-

Quantity

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

推奨製品

推奨コンテンツ

開発ツール・ハードウェア

    • 製品型番

      MOSFET product finder application for Android and iOS

00 ファイルがダウンロード用に選択されています

技術文書

    • 概要 Version Size Action
      DS11822
      N-channel 650 V, 0.91 Ω typ., 5 A, MDmesh™ M6 Power MOSFET in a TO‑220FP package
      2.0
      476.64 KB
      PDF
      DS11822

      N-channel 650 V, 0.91 Ω typ., 5 A, MDmesh™ M6 Power MOSFET in a TO‑220FP package

    • 概要 Version Size Action
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN5318
      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies
      1.0
      1.09 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN5318

      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 概要 Version Size Action
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 概要 Version Size Action
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

HWモデル、CADライブラリ & SVD

    • 概要 Version Size Action
      stf7n65m6 Pspice Model 1.0
      10.56 KB
      ZIP

      stf7n65m6 Pspice Model

関連資料

    • 概要 Version Size Action
      600 to 700 V MDmesh™ M6 High-voltage, SJ MOSFETs to boost the efficiency 1.0
      722.87 KB
      PDF

      600 to 700 V MDmesh™ M6 High-voltage, SJ MOSFETs to boost the efficiency

製品型番 製品ステータス パッケージ グレード RoHSコンプライアンスグレード Material Declaration**
STF7N65M6
Active
TO-220FP インダストリアル Ecopack2

STF7N65M6

Package:

TO-220FP

Material Declaration**:

Marketing Status

Active

Package

TO-220FP

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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