STFH40N60M2

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N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220FP wide crepage package

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製品概要

概要

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.

  • 特徴

    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • 100% avalanche tested
    • Zener-protected
    • Wide creepage distance of 4.25 mm between the pins

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STMicroelectronics - STFH40N60M2

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