STGB20N40LZ

生産終了
Design Win

Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ

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製品概要

概要

This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.

  • 特徴

    • Designed for automotive applications and AEC-Q101 qualified
    • ESD gate-emitter protection
    • Gate-collector high voltage clamping
    • Logic level gate drive
    • Low saturation voltage
    • High pulsed current capability
    • Gate and gate-emitter resistor

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STMicroelectronics - STGB20N40LZ

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