STGF8NC60KD

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Design Win

8 A, 600 V short-circuit rugged IGBT

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製品概要

概要

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

  • 特徴

    • Lower on voltage drop (VCE(sat))
    • Very soft ultra fast recovery antiparallel diode
    • Lower CRES / CIES ratio (no cross-conduction susceptibility)
    • Short circuit withstand time 10µs

EDAシンボル / フットプリント / 3Dモデル

STMicroelectronics - STGF8NC60KD

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