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This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
主な特徴
- Maximum junction temperature: TJ= 175 °C
- Tail-less switching off
- VCE(sat)= 1.85 V (typ.) @ IC= 30 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | Quantity | ECCN (US) | Country of Origin | 概要 | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|---|
| STGFW30V60F | TO-3PF | Tube | Active | 2.2 | 1000 | EAR99 | KOREA (south) | Trench gate field-stop IGBT, V series 600 V, 30 A very high speed | 在庫チェック | サンプル入手 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
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| 製品型番 | 製品ステータス | 概要 | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
|---|---|---|---|---|---|---|
| STGFW30V60F | Active | Trench gate field-stop IGBT, V series 600 V, 30 A very high speed | TO-3PF | インダストリアル | Ecopack1 | |
STGFW30V60F
Package:
Trench gate field-stop IGBT, V series 600 V, 30 A very high speedMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
