STGP20H65FB2

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Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220 package

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製品概要

概要

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

  • 特徴

    • Maximum junction temperature : TJ = 175 °C
    • Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
    • Minimized tail current
    • Tight parameter distribution
    • Low thermal resistance
    • Positive VCE(sat) temperature coefficient

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STMicroelectronics - STGP20H65FB2

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