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This ultrafast IGBT is developed using a new planar technology to yield a device with tighter switching energy variation (Eoff) versus temperature. The suffix "W" denotes a subset of products designed for high switching frequency operation (over 100 kHz).
主な特徴
- Improved Eoffat elevated temperature
- Low CRES / CIESratio (no cross-conduction susceptibility)
- Low VF soft recovery antiparallel diode
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | 数量 | ECCN (US) | Country of Origin | 概要 | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|---|
| STGW35HF60WDI | TO-247 | Tube | アクティブ | - | EAR99 | CHINA | 35 A, 600 V ultrafast IGBT with low drop diode | 在庫チェック | 購入 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
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| 製品型番 | 製品ステータス | 概要 | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
|---|---|---|---|---|---|---|
| STGW35HF60WDI | アクティブ | 35 A, 600 V ultrafast IGBT with low drop diode | TO-247 | インダストリアル | Ecopack2 | |
STGW35HF60WDI
Package:
35 A, 600 V ultrafast IGBT with low drop diodeMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
