STGW60H60DLFB

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製品概要

概要

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the improved "H" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a slightly positive V_CE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

特徴
Maximum junction temperature: T_J= 175 °C

High speed switching series

Minimized tail current

V_CE(sat)= 1.6 V (typ.) @ I_C= 60 A

Tight parameters distribution

Safe paralleling

Low thermal resistance

Low V_Fsoft recovery co-packaged diode

Lead free package
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注目ビデオ

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1200 V IGBT M series

Optimized for hard-switching applications up to 20 kHz

Watch the video (04:34)

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	製品型番	ステータス	概要	タイプ	サプライヤ
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