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This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
主な特徴
- High speed switching
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
- Short-circuit rated
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | 数量 | ECCN (US) | Country of Origin | 概要 | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|---|
| STGWT15H60F | TO-3P | Tube | アクティブ | - | - | EAR99 | KOREA (south) | Trench gate field-stop IGBT, H series 600 V, 15 A high speed | 在庫チェック |
STGWT15H60F
パッケージ
TO-3P梱包タイプ
TubeUnit Price (US$)
*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
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| 製品型番 | 製品ステータス | 概要 | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
|---|---|---|---|---|---|---|
| STGWT15H60F | アクティブ | Trench gate field-stop IGBT, H series 600 V, 15 A high speed | TO-3P | インダストリアル | Ecopack1 | |
STGWT15H60F
Package:
Trench gate field-stop IGBT, H series 600 V, 15 A high speedMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
